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| MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB * * * * * IC Collector current ........................ 200A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 14 3-M6 6 B2X B2 E2 48 62 B2X 30 C2E1 E2 C1 B2 E2 58 B1X 85 E1 B1 6 15 23.5 23 93 108 23 6.5 C2E1 E2 C1 18 5 18 5 18 7.5 Tab#110, t=0.5 B1X E1 B1 16 7 LABEL 30 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 200 200 1240 12 2000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=200A, IB=260A -IC=200A (diode forward voltage) IC=200A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=200A, IB1=400mA, -IB2=4A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 200 2.5 3.0 1.8 -- 2.5 10 2.0 0.1 0.33 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 500 COLLECTOR CURRENT IC (A) Tj=25C 400 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 4 7 5 4 3 2 VCE=2.5V 10 3 7 5 4 3 2 10 2 10 1 IB=1 A DC CURRENT GAIN hFE 0mA IB=50 mA IB=260 A IB=100m VCE=5.0V 300 200 IB=50mA 100 Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0 0 1 2 3 4 5 VCE (V) COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 3 2 BASE CURRENT IB (A) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2.2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3 2 10 1 7 5 4 3 2 10 0 7 5 4 3 10 1 IB=260mA Tj=25C Tj=125C VBE(sat) SATURATION VOLTAGE VCE(sat) Tj=25C VCE=2.5V 2.6 3.0 3.4 3.8 VBE (V) 4.2 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 ton, ts, tf (s) 101 7 5 4 3 2 10 0 7 5 4 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ts ton 3 IC=300A 2 IC=100A Tj=25C Tj=125C IC=200A SWITCHING TIME 1 tf VCC=300V IB1=400mA IB2=-4A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 IC (A) 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) 10 -1 10 1 COLLECTOR CURRENT Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 VCC=300V IC=200A IB1=400mA Tj=25C Tj=125C ts REVERSE BIAS SAFE OPERATING AREA 400 IB2=-3.5A COLLECTOR CURRENT IC (A) 2 ts, tf (s) 350 IB2=-10A 300 250 200 150 100 50 0 0 100 200 300 400 500 600 700 800 Tj=125C SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 10 0 tf 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 DERATING FACTOR OF F. B. S. O. A. 50 s 0 10 s 0 50 s 1m ms 10 COLLECTOR CURRENT IC (A) s 90 DC DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 10 1 7 5 3 2 TC =25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 0.10 0.09 0.08 Zth (j-c) (C/ W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 10 3 7 5 4 3 2 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 10 1 0.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 2000 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 3 2 10 2 Irr (A), Qrr (c) 7 5 4 Qrr 3 2 trr 10 1 7 5 4 3 10 1 Irr trr (s) 2 3 4 5 7 10 2 VCC=300V IB1=400mA 10 -1 IB2=-4A Tj=25C Tj=125C 3 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) Feb.1999 3 1600 10 0 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 0.40 0.32 Zth (j-c) (C/ W) 0.24 0.16 0.08 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) |
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